砷化銦（InAs）單晶片
| 物理參數(shù) | |
| 晶體結(jié)構(gòu) | 立方晶系 |
| 晶格常數(shù) | a=6.058 ? |
| 熔點 | 942 ℃ |
| 密度 | 5.66 g/cm3 |
| 晶向 | Type/Dopant | 濃度(cm-3) | 遷移率(cm2/V.s) | 位錯密度(cm-2) | 可供尺寸 | 表面 |
(100) (111) | N-type/undoped | <= 3 x 1016 | >= 2 x 104 | < 3 x 104 | dia50.8 x 0.5 mm dia76.2 x 0.6 mm | 單面拋光 雙面拋光 |
| N-type/Sn-doped | (5~20) x 1017 | > 2000 | < 1 x 104 | |||
| N-type/S-doped | (3~80) x 1017 | / | < 1 x 104 | |||
| P-type/Zn-doped | (3~80) x 1017 | 60~300 | < 1 x 104 | |||
| P-type/Mn-doped | (5~60) x 1017 | 60~300 | < 1 x 104 |
掃碼添加微信好友